The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region . the relationship of the ideality factor to the applied voltage is theoretically studied 提出了中子辐照下sicpn结电特性退化的新的理论， pn结耗尽区中的辐照陷阶在耗尽区电场的作用下热发射效应得到加强，从而导致pn结正偏和反偏时的复合电流和产生电流的改变。
